The silicon monocrystals received by the BZP method make about 10% of total amount of the made single-crystal silicon and go generally for production of discrete devices, especially tiristor of big power.
Concentration of bystrodiffundiruyushchy impurity of heavy (Fe, Cu, Au, Cr, Zn, etc.) in crystals of silicon, Chokhralsky's by method and BZP, does not exceed 5-Yu13, and in especially pure, received by repeated zonal melting — 5·1011 cm -
In a final look silicon is a plate with a diameter of 15 - 40 cm, 5 - 65 mm thick with one smooth surface. The type of plates with various orientation of a surface and type of conductivity is given in drawing